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浙江大學杭州國際科創中心（以下簡稱杭州科創中心）是新時代杭州市與浙江大學深化全面戰略合作的重大項目。杭州科創中心聚焦物質科學、信息科學、生命科學的會聚融通，推動在微納尺度下多學科交叉的顛覆性技術革命，支撐引領未來高端制造和未來產業發展，打造長三角一體化發展的重要創新極，成為具有世界聲譽的國際化創新生態區和杰出人才匯聚地。為打造一流的人才隊伍，杭州科創中心現向全球發布"青年人才卓越計劃-寬禁帶半導體材料與器件專項"，歡迎優秀青年才俊加盟。

該專項依托杭州科創中心先進半導體研究院實施，研究院聚焦寬禁帶半導體領域的國際前沿和重大科學問題，瞄準國家在信息、能源等領域的重大戰略需求，依托長三角區域領先的產業優勢、浙江大學雄厚的科研實力和杭州科創中心創新的體制機制，打造一個國內領先、國際先進的前沿技術創新研發平臺，推動產學研深度融合發展。研究院由杭州科創中心首席科學家楊德仁院士牽頭建設，學術委員會主任由鄭有炓院士擔任，院長由盛況教授擔任。研究院將集中建設超凈實驗室和寬禁帶半導體材料生長、芯片研制、封裝測試及應用的先進研發設施和大型儀器設備。

一、擬重點引進方向

1、寬禁帶半導體材料及裝備（氮化鎵、碳化硅、氧化鎵、氮化鋁和金剛石等）；

2、寬禁帶半導體器件（基于碳化硅和氮化鎵等材料的功率器件、射頻器件、芯片集成技術及其他相關技術）；

3、封裝測試和應用（功率器件、射頻器件及其他器件相關的封裝、模塊集成、測試技術和應用技術）；

4、其它相關領域。

二、待遇及保障條件

1、提供有競爭力的薪酬保障（一人一議）；

2、為入選者及其團隊成員提供人才公寓，符合條件者可享受杭州科創中心人才房政策；

3、提供首期（3年）300-500萬元的科研資助（可持續滾動資助）；

4、提供100-150㎡辦公實驗空間；

5、提供"專人一站式"服務，共享科研平臺大型儀器設備；

6、入選者中科研業績突出且符合浙江大學人才標準的，可推薦聘至浙江大學；

7、符合條件的人才可享受杭州市和蕭山區相應的人才政策。

三、申報條件

1、具有遠大學術志向、創新精神、較強科研能力和社會責任感；

2、具有博士學位，年齡原則上不超過35周歲；

4、對寬禁帶半導體材料與器件研究領域有足夠的學科背景支持和較好的研究積累與想法，有堅實的專業基礎和較深的學術造詣；

5、具備以獨立pi開展研究工作的能力；

6、有寬禁帶材料與器件領域院士或國際知名專家推薦者優先考慮。

四、聯系方式

聯系人：楊佩雯

電話：0571-82359099

郵箱：，郵件標題注明：應聘崗位+本人姓名+學位+畢業學校+所學專業+高校人才網

地址：浙江省杭州市蕭山區建設三路733號浙江大學杭州國際科創中心

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附件2：浙江大學杭州國際科創中心青年人才卓越計劃申報表

zju-hangzhou global scientific and technological innovation center recruitment program for "young talent plan"

- recruiting researchers in wide-bandgap semiconductors

zju-hangzhou global scientific and technological innovation center (hic) is a world-class and future-oriented r&d center, jointly established by zhejiang university and hangzhou government. hic's mission is to build an open and integrated international innovation hub that integrates the material sciences, information sciences, and life sciences in the yangtze river delta region.

to build a world-class research team, the hic has launched a new recruitment program: " young talent plan".

advanced semiconductor research institute is an innovative research platform at hic. the institute has advanced cleanroom facilities in the area of wide-bandgap semiconductor materials, device and integrated circuit fabrication, and packaging and testing. supported by the abudant industry resources in the yangtze river delta region, and the r&d capabilities of zhejiang university, the institute aims to become a world-class innovation platform and ecosystem.

1. research areas

1) wide-bandgap semiconductor materials (gan, sic, ga2o3, diamond, aln, etc.)

2) wide-bandgap semiconductor devices (power devices, rf devices and integrated circuits based on sic, gan and other materials)

3) packaging and testing technology (ic packaging, module integration and testing technologies related to power devices, rf devices and other devices)

2. working environment, salary and benefits

1) competitive salary, discussed individually

2) housing benefits

3) start-up research funding of 3-5 million yuan for 3-years (with possible continuation)

4) 100-150 m2 office and lab space

5) one-stop full-range administrative support service

6) if qualified, can be jointly employed as a dual-appointment faculty member in zhejiang university

7) various provincial and municipal talent policies

3. qualifications

1) strong research background, strong motivation in academic/technological career

2) less than 35 years of age

3) have a ph.d. degree

4) have solid academic background in the field of wide-bandgap semiconductor materials and devices

5) have the ability to conduct research work independently as pi

6) recommendation letters by academicians in the field of wide-bandgap materials and devices or internationally renowned experts will be considered in recruiting process

contact: ms. yang

tel.:0571-82359099

email:

address: zju-hangzhou global scientific and technological innovation center, zhejiang university, no. 733, jianshe third road, xiaoshan district, hangzhou, zhejiang province china

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